| PART |
Description |
Maker |
| 1N822 1N822-1 1N822A 1N824 1N824-1 1N824A 1N821-1 |
Bobbins Transformer; Supply Voltage:230V; Power Rating:2.5VA; Mounting Type:PCB Surface; Approval Bodies:cURus; External Depth:1.375"; External Height:0.813"; External Width:1.125"; Frequency:60GHz; Leaded Process Compatible:Yes
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.55 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
TRANSF 17VAC .34A FLAT PACK PW 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
0TC Reference Voltage Zener 0TC参考电压稳
Cleaning Compound; Dispensing Method:Spray; For Use With:Static Control Mats and Work Surfaces; Volume:1quart (US) RoHS Compliant: NA
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
Coilcraft, Inc.
Microsemi, Corp.
TOKO, Inc.
MICROSEMI[Microsemi Corporation]
|
| NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A.
Silicon Power Rectifier Diode, 25 Amp
Silicon Power Rectifier Diode 25 Amp
Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
|
| 1N4154 |
500mW 35 Volt Silicon Epitaxial Diode
|
MCC[Micro Commercial Components]
|
| 1N4454 |
400mW 75 Volt Silicon Epitaxial Diode
|
Micro Commercial Compon...
|
| DL914 |
500mW 100 Volt Silicon Switching Diode
|
Micro Commercial Compon...
Micro Commercial Components Corp.
|
| MMBD4148 |
350mW 100 Volt Silicon Epitaxial Diode
|
MCC[Micro Commercial Components]
|
| MMBD914 |
350mW 100 Volt Silicon Epitaxial Diode
|
MCC[Micro Commercial Components]
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| ISD380-9 ISD25-15 ISDF65-7 ISD320-16 ISDR320-22 IS |
380 A, 900 V, SILICON, RECTIFIER DIODE
25 A, 1500 V, SILICON, RECTIFIER DIODE
65 A, 700 V, SILICON, RECTIFIER DIODE
320 A, 1600 V, SILICON, RECTIFIER DIODE
320 A, 2200 V, SILICON, RECTIFIER DIODE
160 A, 1400 V, SILICON, RECTIFIER DIODE
65 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 1300 V, SILICON, RECTIFIER DIODE
380 A, 1200 V, SILICON, RECTIFIER DIODE
380 A, 1500 V, SILICON, RECTIFIER DIODE
380 A, 600 V, SILICON, RECTIFIER DIODE
380 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 500 V, SILICON, RECTIFIER DIODE
160 A, 900 V, SILICON, RECTIFIER DIODE
160 A, 1000 V, SILICON, RECTIFIER DIODE
160 A, 500 V, SILICON, RECTIFIER DIODE
|
|
| YG963S6R |
SILICON DIODE
IC AM29LV065 64 MBIT (8MX8) CMOS 3.0 VOLT UNIFORM SECTOR FLASH MEMORY
|
http://
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| BYP58-800 BYP57 BYP57-100 BYP57-150 BYP57-200 BYP5 |
35 A, 200 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 700 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 150 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 75 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35A Silicon Power Rectifier Diode 35 A, 150 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35 A, 75 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35 A, 500 V, SILICON, RECTIFIER DIODE
|
Diodes, Inc.
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| MSK4351ED |
50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID
|
ETC
|
|
